MC10E141FNR2G(2016) Просмотр технического описания (PDF) - ON Semiconductor
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MC10E141FNR2G Datasheet PDF : 8 Pages
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MC10E141
Table 9. AC CHARACTERISTICS (VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 1))
0°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
fSHIFT
tPLHt
PHL
Max. Shift Frequency
Propagation Delay To Output
Clk
MR
700 900
700 900
700 900
MHz
ps
625 750 975 625 750 975 625 750 975
600 725 975 600 725 975 600 725 975
ts
Setup Time
D
SEL0
SEL1
ps
175 25
175 25
175 25
350 200
350 200
350 200
300 150
300 150
300 150
th
Hold Time
D
SEL0
SEL1
ps
200 − 25
200 − 25
200 − 25
100 − 200
100 − 200
100 − 200
100 −150
100 −150
100 −150
tRR
Reset Recovery Time
tPW
Minimum Pulse Width
Clk, MR
900 700
900 700
900 700
ps
ps
400
400
400
tSKEW
tJITTER
tr
tf
Within-Device Skew (Note 2)
Random Clock Jitter (RMS)
Rise/Fall Times (20−80%)
60
60
60
ps
<1
<1
<1
ps
300 525 800 300 525 800 300 525 800 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. 10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
2. Within-device skew is defined as identical transitions on similar paths through a device.
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