MBR30H100CT Просмотр технического описания (PDF) - Vishay Semiconductors
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MBR30H100CT Datasheet PDF : 4 Pages
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MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
MBRF30H90CT, MBRF30H100CT
15
10
MBR30H90CT, MBR30H100CT
MBRB30H90CT, MBRB30H100CT
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Derating Curve Per Diode
10 000
1000
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
300
TJ = TJ Max.
250
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
10 000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
0.1
0.01
0.1
1
10
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Aug-13
3
Document Number: 88791
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