MBM29F017A-12PFTN Просмотр технического описания (PDF) - Fujitsu

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MBM29F017A-12PFTN

FLASH MEMORY CMOS 16M (2M × 8) BIT

Fujitsu 

MBM29F017A-70/-90/-12

s FLEXIBLE SECTOR-ERASE ARCHITECTURE

• Thirty two 64K byte sectors

• 8 sector groups each of which consists of 4 adjacent sectors in the following pattern; sectors 0-3, 4-7, 8-11,

12-15, 16-19, 20-23, 24-27, and 28-31

• Individual-sector or multiple-sector erase capability

• Sector group protection is user-definable

SA31

SA30

SA29

SA28

64K byte

64K byte

64K byte

64K byte

1FFFFFH

1EFFFFH

1DFFFFH

1CFFFFH

1BFFFFH

Sector

Group 7

1AFFFFH

19FFFFH

18FFFFH

17FFFFH

16FFFFH

15FFFFH

14FFFFH

13FFFFH

12FFFFH

11FFFFH

10FFFFH

32 Sectors Total

0FFFFFH

0EFFFFH

0DFFFFH

0CFFFFH

0BFFFFH

0AFFFFH

09FFFFH

08FFFFH

07FFFFH

06FFFFH

05FFFFH

04FFFFH

03FFFFH

SA3

64K byte

02FFFFH

SA2

64K byte

Sector

SA1

64K byte

01FFFFH Group 0

00FFFFH

SA0

64K byte

000000H

4

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