MBM29DL321BE Просмотр технического описания (PDF) - Fujitsu

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MBM29DL321BE

32M (4M × 8/2M × 16) BIT Dual Operation

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20881-3E

FLASH MEMORY

CMOS

32M (4M × 8/2M × 16) BIT Dual Operation

MBM29DL32XTE/BE -80/90/12

s DESCRIPTION

The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M

words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be

reprogrammed in standard EPROM programmers.

MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two

separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s

standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access

from a non-busy bank of the array while an embedded write (either a program or an erase) operation is

simultaneously taking place on the other bank.

s PRODUCT LINE UP

(Continued)

Part No.

Ordering Part No.

VCC = 3.3 V

+0.3 V

–0.3 V

VCC = 3.0 V

+0.6 V

–0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

MBM29DL32XTE/BE

80

—

—

—

90

12

80

90

120

80

90

120

30

35

50

s PACKAGES

48-pin plastic TSOP (I)

Marking Side

48-pin plastic TSOP (I)

63-ball plastic FBGA

(FPT-48P-M19)

Marking Side

(FPT-48P-M20)

(BGA-63P-M01)

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