MAPLST1900-060CF Просмотр технического описания (PDF) - Tyco Electronics

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MAPLST1900-060CF

RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 60W, 26V

Tyco Electronics 

RF Power Field Effect Transistor

LDMOS, 1890 — 1925 MHz, 60W, 26V

10/31/03

Preliminary

Features

Designed for PHS applications in the

1890-1925 MHz frequency band.

Q Typical performance in PHS mode at

-65 dBc ACPR (600kHz):

Q Average Output Power: 16W

Q Gain: 12.5dB (typ.)

Q Efficiency: 26% (typ.)

Q 10:1 VSWR Ruggedness at 16W, 26V,

1890MHz)

Package Style

MAPLST1900-060CF

Maximum Ratings

Parameter

Drain—Source Voltage

Gate—Source Voltage

Total Power Dissipation @ TC = 25 °C

Storage Temperature

Junction Temperature

Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VGS

PD

TSTG

TJ

Rating

65

20

97

-40 to +150

+200

Units

Vdc

Vdc

W

°C

°C

Symbol

RΘJC

Max

1.0

Unit

ºC/W

NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging

MOS devices should be observed.

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