MAC4DHMT4(2004) Просмотр технического описания (PDF) - ON Semiconductor
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MAC4DHMT4 Datasheet PDF : 8 Pages
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MAC4DHM
110
105
100
95
90
0
a = 30°
60°
90°
α
α
120°
a = CONDUCTION ANGLE
180° dc
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS), RMS ON−STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
6.0
5.0
α
α
4.0
a = CONDUCTION ANGLE
3.0
180°
dc
120°
90°
2.0
1.0
0
0
60°
a = 30°
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS), RMS ON−STATE CURRENT (AMPS)
Figure 2. On−State Power Dissipation
100
1.0
TYPICAL @ TJ = 25°C
10
MAXIMUM @ TJ = 110°C
0.1
1.0
ZqJC(t) = RqJC(t)Sr(t)
MAXIMUM @ TJ = 25°C
0.1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 4. Transient Thermal Response
8.0
7.0
Q4
6.0
5.0
Q3
4.0
Q2
3.0
Q1
2.0
1.0
0
−40 −25 −10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
1.0
Q4
Q1
0.8
Q2
Q3
0.6
0.4
0.2
−40 −25
−10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
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