MAAPSS0093 Просмотр технического описания (PDF) - Tyco Electronics
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MAAPSS0093 Datasheet PDF : 7 Pages
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RF Power Amplifier IC
For 2.5 GHz ISM
Typical Characteristics
Output Power, Drain Current and Efficiency
vs. Input Power
60
50
40
30
20
10
0
-10
350
300
250
I
DD
200
PAE
P
OUT
V = 3.3 V
DD1, 2, 3
150
F = 2450 MHz 100
50
-5
0
5
P (dBm)
IN
Output Power, Drain Current and Efficiency
vs. Voltage
60
50
PAE
40
30
350
I
DD
300
250
P
OUT
200
20
10
0
1
P = -2 dBm
IN
F = 2450 MHz
2
I
DD
PAE
P
OUT
3
4
V (V)
DD
150
100
50
5
Output Power, Input Return Loss and Efficiency
vs. Frequency
60
0
50
-5
40
PAE
-10
P
OUT
30
-15
20
P = - 2 dBm
10
IN
V = 3.3 V
DD
0
2200
2300
IRL
2400
2500
Frequency (MHz)
-20
-25
-30
2600
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
RoHS
Compliant
MAAPSS0093
V1
Output Power, Drain Current and Efficiency
vs. Input Power for Low Current “Bypass” Mode
(VDD1,2 = 3.3 V, VDD3 = 0.0 V)
12
350
V = 3.3 V, V = 0.0 V
DD1, 2
DD3
10 F = 2450 MHz
300
8
250
6
PAE
200
P
OUT
4
150
2
100
0
-10
-5
I
DD
50
0
5
P (dBm)
IN
Output Power and Drain Current
vs. VDD1 for Power Control
35
350
30
300
25
20
P
15
OUT
250
I
DD1
200
I
DD2
150
10
100
5
50
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V (V)
DD1
Output Power and Drain Current at VDD = +3.0 V
vs. Temperature
35
30
25
20
15
10
P = - 2 dBm
IN
5
V = 3.0 V
DD
F = 2450 MHz
0
-50
0
50
Temperature, T (oC)
S
350
300
250
I
DD
200
P
150
OUT
100
50
0
100
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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