MA2B001(2004) Просмотр технического описания (PDF) - Panasonic Corporation

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MA2B001
(Rev.:2004)

Silicon planar type trigger device

Panasonic Corporation 

This product complies with the RoHS Directive (EU 2002/95/EC).

Trigger Devices

MA2B001

Silicon planar type trigger device

Unit : mm

Thyristor TRIAC trigger circuit

■ Features

• Satisfactory symmetry of breakover voltage VBO

/ • Large output voltage VO and small breakover current IBO

e ■ Absolute Maximum Ratings Ta = 25°C

e. Parameter

Symbol Rating

Unit

nc d stag Power dissipation (Average)

PD(AV)

150

mW

le Peak current *1

IP

2.0

A

a e cyc Operating ambient temperature *2

Topr

100

°C

life Storage temperature

Tstg

−55 to +125

°C

n u uct Note) *1: Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz

rod *2: Maximum ambient temperature during operation

24 min.

4.0±0.5

24 min.

φ 1.78±0.15

Cathode

Anode

DO-35-A2 Package

MainistectoinuedninlcalnuedtdesmifaaoinilnnlottewenninaagncncocfoeneuttitrynypuPpeeeeddttyyppeeudt latesticin.cfoo.rjmp/aetnio/n. ■ Electrical Characteristics Ta = 25°C ± 3°C

p m dis tinu bo on Parameter

Symbol

Conditions

Min Typ Max Unit

con ed on L a nas Breakover voltage *1

is lan isc UR .pa Output voltage *1

e/D p d ing on Breakover current

Danc llow mic Temperature coefficient of

ten fo .se breakover voltage

in it w Breakover voltage deviation *2

VBO

VO

IBO

T.C.(VBO)

I = IBO

V = VBO

∆VBO

28

36

V

4.0 7.0

V

50

µA

0.1

%/°C

3.5

V

Ma e vis ://ww Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

as ttp 2. Absolute frequency of input and output is 100 MHz.

Ple h 3. *1: Measurement of VBO and VO

*2: Symmetry of VBO

VBO

30 kΩ 70 kΩ

VO

VBO

VBO

100 V[rms]

0.068 µF

20 Ω

Publication date: March 2004

SKM00001BED

1

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