WSF128K32-22H2C Просмотр технического описания (PDF) - White Electronic Designs => Micro Semi

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WSF128K32-22H2C

128KX32 SRAM/FLASH MODULE

White Electronic Designs => Micro Semi 

White Electronic Designs

WSF128K32-XH2X

PRELIMINARY

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol Min Max Unit

Operating Temperature

TA

-55 +125 °C

Storage Temperature

TSTG -65 +150 °C

Signal Voltage Relative to GND

VG

-0.5

7.0

V

Junction Temperature

TJ

150

°C

Supply Voltage

VCC

-0.5

7.0

V

Parameter

Flash Data Retention

Flash Endurance (write/erase cycles)

10 years

10,000

NOTE:

1. Stresses above the absolute maximum rating may cause permanent damage to the

device. Extended operation at the maximum levels may degrade performance and

affect reliability.

RECOMMENDED OPERATING CONDITIONS

Parameter

Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

VCC

VIH

VIL

Min

Max

Unit

4.5

5.5

V

2.2 VCC + 0.3

V

-0.5

+0.8

V

SRAM TRUTH TABLE

SCS#

OE#

SWE# Mode

H

X

X

Standby

L

L

H

Read

L

H

H

Read

L

X

L

Write

NOTE:

1. FCS# must remain high when SCS# is low.

Data I/O

High Z

Data Out

High Z

Data In

Power

Standby

Active

Active

Active

CAPACITANCE

Ta = +25°C

Parameter

Symbol

Conditions

Max Unit

OE# capacitance

F/S WE1-4# capacitance

F/S CS# capacitance

D0-31 capacitance

A0-16 capacitance

COE VIN = 0 V, f = 1.0 MHz 80 pF

CWE VIN = 0 V, f = 1.0 MHz 30 pF

CCS VIN = 0 V, f = 1.0 MHz 50 pF

CI/O VIN = 0 V, f = 1.0 MHz 30 pF

CAD VIN = 0 V, f = 1.0 MHz 80 pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C

Parameter

Symbol Conditions

Min

Max

Unit

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

µA

Output Leakage Current

ILO SCS# = VIH, OE# = VIH, VOUT = GND to VCC

10

µA

SRAM Operating Supply Current x 32 Mode ICCx32 SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5

670

mA

Standby Current

ISB FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5

80

mA

SRAM Output Low Voltage

VOL IOL = 8mA, VCC = 4.5

0.4

V

SRAM Output High Voltage

VOH IOH = -4.0mA, VCC = 4.5

2.4

V

Flash VCC Active Current for Read (1)

ICC1 FCS# = VIL, OE# = SCS# = VIH

220

mA

Flash VCC Active Current for Program or

Erase (2)

ICC2 FCS# = VIL, OE# = SCS# = VIH

280

mA

Flash Output Low Voltage

VOL IOL = 8.0mA, VCC = 4.5

0.45

V

Flash Output High Voltage

VOH1 IOH = -2.5 mA, VCC = 4.5

0.85 x VCC

V

Flash Output High Voltage

VOH2 IOH = -100 µA, VCC = 4.5

VCC -0.4

V

Flash Low VCC Lock Out Voltage

VLKO

3.2

V

NOTES:

1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).

The frequency component typically is less than 2 mA/MHz, with OE# at VIH.

2. ICC active while Embedded Algorithm (program or erase) is in progress.

3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

October 2004

Rev. 4

2

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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