T15V2M16B Просмотр технического описания (PDF) - Taiwan Memory Technology

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T15V2M16B

128K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

DATA RETENTION CHARACTERISTICS

T15V2M16B

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention

Time

Operation Recovery Time

SYM.

VDR

ICCDR

tCDR

TEST CONDITION

CE ≥VCC -0.2V

VIN ≥ Vcc -0.2V or

VIN ≤ 0.2V

tR

*note : the data retention current ‘max=40uA’ only for –45ns .

MIN.

2.0

-

0

tRC

DATA RETENTION WAVEFORM

(Ta = -10 ~ +70 °C / -40°C ~ 85°C)

Data Retention Mode

MAX.

-

15/40*

-

-

UNIT

V

uA

ns

ns

Vcc

Vcc_typ

tCDR

VDR > 2.0V

Vcc_typ

tR

CE

VIH

CE >Vcc- 0.2V

VIH

TM Technology Inc. reserves the right

P. 10

to change products or specifications without notice.

Publication Date: NOV. 2002

Revision:A

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