M54HC541D1 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

Список матч

M54HC541D1

RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED)

STMicroelectronics 

M54HC541

Table 6: AC Electrical Characteristics (CL = 50 pF, Input tr = tf = 6ns)

Symbol

Parameter

tTLH tTHL Output Transition

Time

tPLH tPHL Propagation Delay

Time

tPZL tPZH High Impedance

Output Enable

Time

tPLZ tPHZ High Impedance

Output Disable

Time

Test Condition

VCC CL

(V) (pF)

2.0

4.5 50

6.0

2.0

4.5 50

6.0

2.0

4.5 150

6.0

2.0

4.5 50 RL = 1 KΩ

6.0

2.0

4.5 150 RL = 1 KΩ

6.0

2.0

4.5 50 RL = 1 KΩ

6.0

Value

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

25 60

75

90

7 12

19

18 ns

6 10

13

15

40 85

105

130

10 17

21

26 ns

9 14

18

22

56 115

145

175

14 23

29

35 ns

12 20

25

30

47 110

140

165

13 22

28

33 ns

11 19

24

28

61 135

170

205

17 27

34

41 ns

14 23

29

35

52 110

140

165

15 22

28

33 ns

13 19

24

28

Table 7: Capacitive Characteristics

Test Condition

Value

Symbol

Parameter

VCC

(V)

CIN Input Capacitance 5.0

CPD Power Dissipation

Capacitance (note 5.0

1)

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

5 10

10

10 pF

31

pF

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)

5/11

Share Link: