M48T512V(2010) Просмотр технического описания (PDF) - STMicroelectronics
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M48T512V Datasheet PDF : 23 Pages
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M48T512Y
M48T512V
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM
Features
■ Integrated ultra low power SRAM, real-time
clock, power-fail control circuit, battery, and
crystal
■ BCD coded year, month, day, date, hours,
minutes, and seconds
■ Automatic power-fail chip deselect and WRITE
protection
■ WRITE protect voltages:
(VPFD = Power-fail deselect voltage)
– M48T512Y: VCC = 4.5 to 5.5 V
4.2 V ≤ VPFD ≤ 4.5 V
– M48T512V: VCC = 3.0 to 3.6 V
2.7 V ≤ VPFD ≤ 3.0 V
(contact ST sales office for availability)
■ Conventional SRAM operation; unlimited
WRITE cycles
■ Software controlled clock calibration for high
accuracy applications
■ 10 years of data retention and clock operation
in the absence of power
■ Pin and function compatible with industry
standard 512 K x 8 SRAMS
■ Self-contained battery and crystal in DIP
package
■ RoHS compliant
– Lead-free second level interconnect
32
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PMDIP32 module (PM)
June 2010
Doc ID 5747 Rev 6
1/23
www.st.com
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