M390S2858CTU Просмотр технического описания (PDF) - Samsung

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M390S2858CTU

PC133/PC100 Low Profile Registered DIMM

Samsung 

M390S2858CTU

PC133/PC100 Low Profile Registered DIMM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Parameter

Symbol

Test Condition

Operating current

(One bank active)

Burst length = 1

ICC1 tRC ≥ tRC(min)

IO = 0 mA

Precharge standby current

in power-down mode

Precharge standby current

in non power-down mode

ICC2P CKE ≤ VIL(max), tCC = 10ns

ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞

ICC2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active standby current in

power-down mode

Active standby current in

non power-down mode

(One bank active)

ICC3P CKE ≤ VIL(max), tCC = 10ns

ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞

ICC3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating current

(Burst mode)

IO = 0 mA

ICC4

Page burst

4Banks activated

tCCD = 2CLKs

Refresh current

ICC5 tRC ≥ tRC(min)

Self refresh current

ICC6 CKE ≤ 0.2V

Notes : 1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Version

Unit Note

- 7C -7A -1H -1L

2840 2660 2660 2660 mA 1

422

mA

74

1070

mA

362

566

mA

218

1430

mA

902

mA

3020 3020 2840 2840 mA 1

5000 4640 4460 4460 mA 2

458

mA

Rev. 0.1 Sept. 2001

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