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M390S2858CT1

SDRAM DIMM

Samsung 

M390S2858CT1

PC133 Registered DIMM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Parameter

Symbol

Test Condition

Operating current

(One bank active)

Precharge standby current in

power-down mode

Precharge standby current in

non power-down mode

Burst length =1

ICC1 tRC ≥ tRC(min)

IO = 0 mA

ICC2P CKE ≤ VIL(max), tCC = 10ns

ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞

ICC2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active standby current in

power-down mode

Active standby current in

non power-down mode

ICC3P CKE ≤ VIL(max), tCC = 10ns

ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞

ICC3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating current

(Burst mode)

Refresh current

Self refresh current

IO = 0mA

ICC4 Page Burst

4 Banks activated

tCCD=2CLK

ICC5 tRC ≥ tRC(min)

ICC6 CKE ≤ 0.2V

Notes : 1. Measured with outputs open.

2. Refresh period is 64ms.

3. Measured with 1 PLL & 3 Drive ICs.

4. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Version

-7C

-7A

2840

2660

422

74

1070

362

566

218

1430

902

3020

3020

5000

4640

458

Unit Note

mA 1

mA 3

mA 3

mA 3

mA 3

mA 3

mA 1

mA 2

mA 3

REV. 0.1 Sept. 2001

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