BS62LV2005TC Просмотр технического описания (PDF) - Brilliance Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
BS62LV2005TC Datasheet PDF : 10 Pages
| |||
BSI
BS62LV2005
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
VIH
IIL
IOL
VOL
VOH
ICC
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Vcc=5.0V
Vcc=5.0V
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
Vcc = Max, IOL = 2mA
Vcc=5.0V
Vcc = Min, IOH = -1mA
Vcc=5.0V
Operating Power Supply CE1 = VIL, or CE2 = VIH,
Current
IDQ = 0mA, F = Fmax(3)
Vcc=5.0V
MIN. TYP. (1) MAX.
UNITS
-0.5
--
0.8
V
2.2
--
Vcc+0.2
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
2.4
--
--
V
--
--
35
mA
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA, F = Fmax(3)
Vcc=5.0V
--
--
2
mA
CE1ЊVcc-0.2V, CE2Љ0.2V,
ICCSB1
Standby Current-CMOS VINЊVcc-0.2V or VINЉ0.2V
Vcc=5.0V
--
0.6
6
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V, CE2 Љ 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
ICCDR
tCDR
tR
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CE1 Њ Vcc - 0.2V, CE2 Љ 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
MIN. TYP. (1) MAX.
1.5
--
--
--
0.01
1
0
--
--
TRC (2)
--
--
UNITS
V
uA
ns
ns
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE1 ≥ Vcc - 0.2V
Vcc
tR
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
t CDR
VDR Њ 1.5V
Vcc
tR
CE2
VIL
CE2 Љ 0.2V
VIL
R0201-BS62LV2005
3
Revision 2.4
April 2002
Share Link: 