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M36W416BG Просмотр технического описания (PDF) - STMicroelectronics
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Компоненты Описание
Список матч
M36W416BG
16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
STMicroelectronics
M36W416BG Datasheet PDF : 62 Pages
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M36W416TG, M36W416BG
Symbol
Parameter
Device
I
PPE
Program Current (Erase)
Flash
V
IL
Input Low Voltage
V
IH
Input High Voltage
Flash & SRAM
Flash & SRAM
V
OL
Output Low Voltage
Flash & SRAM
V
OH
Output High Voltage
Flash & SRAM
V
PP1
Program Voltage
(Program or Erase
operations)
Program Voltage
V
PPFH
(Program or Erase
operations)
Program Voltage
V
PPLK
(Program and Erase lock-
out)
V
LKO
V
DDF
Supply Voltage
(Program and Erase lock-
out)
Flash
Flash
Flash
Flash
Test Condition
V
PPF
= 12V ± 0.5V
Erase in progress
V
PPF
= V
DDF
Erase in progress
V
DDQF
= V
DDS
≥
2.7V
V
DDQF
= V
DDS
≥
2.7V
V
DDQF
= V
DDS
= V
DD
min
I
OL
= 100µA
V
DDQF
= V
DDS
= V
DD
min
I
OH
= –100µA
Min Typ Max Unit
10 mA
–0.3
0.7
V
DDQF
V
DDQ
–0.1
5
µA
0.8
V
V
DDQF
+0.3
V
0.1 V
V
1.65
3.6 V
11.4
12.6 V
1
V
2
V
14/62
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