M36W216TI85ZA1T Просмотр технического описания (PDF) - STMicroelectronics

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M36W216TI85ZA1T

16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product

STMicroelectronics 

M36W216TI, M36W216BI

VSSF and VSSS Ground. VSSF and VSSS are the

ground reference for all voltage measurements in

the Flash and SRAM chips, respectively.

Note: Each device in a system should have VD-

DF, VDDQF and VPPF decoupled with a 0.1µF ca-

pacitor close to the pin. See Figure 9, AC

Measurement Load Circuit. The PCB trace

widths should be sufficient to carry the re-

quired VPPF program and erase currents.

FUNCTIONAL DESCRIPTION

The Flash and SRAM components have separate

power supplies and grounds and are distinguished

by three chip enable inputs: EF for the Flash mem-

ory and E1S and E2S for the SRAM.

Recommended operating conditions do not allow

both the Flash and the SRAM to be in active mode

at the same time. The most common example is

simultaneous read operations on the Flash and

the SRAM which would result in a data bus con-

tention. Therefore it is recommended to put the

SRAM in the high impedance state when reading

the Flash and vice versa (see Table 2 Main Oper-

ation Modes for details).

Figure 4. Functional Block Diagram

VDDF

VDDQF

VPPF

EF

GF

WF

RPF

WPF

A17-A19

A0-A16

Flash Memory

16 Mbit (x16)

VDDS

VSSF

DQ0-DQ15

E1S

E2S

GS

WS

UBS

LBS

SRAM

2 Mbit (x16)

VSSS

AI07904

9/62

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