M36W216BI Просмотр технического описания (PDF) - STMicroelectronics

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M36W216BI

16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product

STMicroelectronics 

M36W216TI, M36W216BI

Table 10. Flash Commands

Bus Write Operations

Commands

No. of

Cycles

1st Cycle

Bus

Op.

Addr Data

2nd Cycle

Bus

Op.

Addr

Data

3nd Cycle

Bus

Op.

Addr

Data

Read Memory Array

1+

Write

X

FFh Read

Read

Addr

Data

Read Status Register

1+

Write X

70h Read

X

Status

Register

Read Electronic Signature 1+

Write X

Signature

90h Read Addr (2) Signature

Read CFI Query

1+

Write X

98h Read CFI Addr Query

Erase

2

Write

X

20h Write

Block

Addr

D0h

Program

2

Write

X

40h or

10h

Write

Addr

Data

Input

Double Word Program(3)

3

Write X

30h Write Addr 1

Data

Input

Write

Addr 2

Data

Input

Clear Status Register

1

Write

X

50h

Program/Erase Suspend

1

Write X B0h

Program/Erase Resume

1

Write X D0h

Block Lock

2

Write

X

60h

Write

Block

Address

01h

Block Unlock

2

Write

X

60h

Write

Block

Address

D0h

Block Lock-Down

2

Write

X

60h

Write

Block

Address

2Fh

Protection Register

Program

2

Write X C0h Write Address

Note: 1. X = Don’t Care.

2. The signature addresses are listed in Tables 11, 12 and 13.

3. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.

Data

Input

Table 11. Read Electronic Signature

Code

Device

EF GF

Manufacture.

Code

VIL VIL

Device Code

M36W216TI VIL VIL

M36W216BI VIL VIL

Note: RPF = VIH.

WF A0

VIH VIL

VIH VIH

VIH VIH

A1 A2-A7 A8-A19

VIL

0

Don’t Care

VIL

0

Don’t Care

VIL

0

Don’t Care

DQ0-DQ7 DQ8-DQ15

20h

00h

CEh

88h

CFh

88h

25/62

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