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P4C1024L

LOW POWER 128K x 8 CMOS STATIC RAM

Performance Semiconductor 

P4C1024L

RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE

Temperature Range (Ambient)

Commercial (0°C to 70°C)

Industrial (-40°C to 85°C)

Supply Voltage

4.5V ≤ VCC ≤ 5.5V

4.5

≤

V

CC

≤

5.5V

MAXIMUM RATINGS

Stresses greater than those listed can cause permanent damage to the device. These are absolute stress

ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those

given in the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can

adversely affect device reliability.

Symbol

Parameter

Min

Max

Unit

VCC

VTERM

T

A

S

TG

IOUT

ILAT

Supply Voltage with Respect to GND

Terminal Voltage with Respect to GND (up to 7.0V)

Operating Ambient Temperature

Storage Temperature

Output Current into Low Outputs

Latch-up Current

-0.5

-0.5

-55

-65

>200

7.0

V

VCC + 0.5

V

125

°C

150

°C

25

mA

mA

DC ELECTRICAL CHARACTERISTICS

(Over Recommended Operating Temperature & Supply Voltage)

Symbol

Parameter

Test Conditions

Min

VOH

Output High Voltage

IOH = –1mA, VCC = 4.5V

2.4

(I/O0 - I/O7)

VOL

Output Low Voltage

(I/O - I/O )

0

7

IOL = 2.1mA

VIH

Input High Voltage

2.2

VIL

Input Low Voltage

-0.5

I

LI

Input Leakage Current

GND

≤

V

IN

≤

V

CC

Ind'l. -5

Com'l. -2

ILO

Output Leakage Current GND ≤ VOUT ≤ VCC

Ind'l. -5

CE

1

≥

V

IH

or

CE

2

≤

V

IL

Com'l.

-2

ISB

VCC Current

VCC = 5.5V, IOUT = 0 mA

TTL Standby Current

CE

1

=

VIH

or

CE2

=

VIL

(TTL Input Levels)

ISB1

VCC Current

VCC = 5.5V, IOUT = 0 mA

CMOS Standby Current

(CMOS Input Levels)

CE

1

≥

VCC

-0.2V,

CE2

≤

0.2V

Max

Unit

V

0.4

V

VCC + 0.3

V

0.8

V

+5

µA

+2

+5

µA

+2

3

mA

100

µA

152

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