HN29V51211T-50 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29V51211T-50

512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

Hitachi -> Renesas Electronics 

HN29V51211 Series

512M AND type Flash Memory

More than 32,113-sector (542,581,248-bit)

ADE-203-1221 (Z)

Preliminary

Rev. 0.0

Sep. 20, 2000

Description

The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has

fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase

is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all

sector address) and less than 32,768 sectors.

Features

• On-board single power supply (VCC): VCC = 2.7 V to 3.6 V

• Organization

 AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)

 Data register: (2048 + 64) bytes

• Multi-level memory cell

 2 bit/per memory cell

• Automatic programming

 Sector program time: 1.0 ms (typ)

 System bus free

 Address, data latch function

 Internal automatic program verify function

 Status data polling function

• Automatic erase

 Single sector erase time: 1.0 ms (typ)

 System bus free

 Internal automatic erase verify function

 Status data polling function

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specification.

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