W29C040P-12B Просмотр технического описания (PDF) - Winbond

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W29C040P-12B

512K ´8 CMOS FLASH MEMORY

Winbond 

W29C040

Power-up Timing

PARAMETER

Power-up to Read Operation

Power-up to Write Operation

CAPACITANCE

(VDD = 5.0V, TA = 25° C, f = 1 MHz)

PARAMETER

DQ Pin Capacitance

Input Pin Capacitance

SYMBOL

CDQ

CIN

SYMBOL

TPU. READ

TPU. WRITE

CONDITIONS

VDQ = 0V

VIN = 0V

TYPICAL

100

10

UNIT

µS

mS

MAX.

12

6

UNIT

pF

pF

AC CHARACTERISTICS

AC Test Conditions

(VDD = 5.0V ±10% for 90,120 nS

PARAMETER

Input Pulse Levels

Input Rise/Fall Time

Input/Output Timing Level

Output Load

AC Test Load and Waveform

CONDITIONS

0V to 3V

<5 nS

1.5V/1.5V

1 TTL Gate and CL = 100 pF for 90/120/150 nS

+5V

DOUT

100 pF for 90/120 nS

(Including Jig and Scope)

1.8KΩ

1.3KΩ

Input

3V

0V

Output

1.5V 1.5V

Test Point

Test Point

- 11 -

Publication Release Date: May 1999

Revision A5

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