LX5510BLQ Просмотр технического описания (PDF) - Microsemi Corporation
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LX5510BLQ Datasheet PDF : 8 Pages
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LX5510B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA ≤ 70°C except where
otherwise noted and the following test conditions: VC = 3.3V, VREF = 2.88V, ICQ = 70mA, TA = 25°C
Parameter
Symbol
Test Conditions
` SECTION HEADER
Frequency Range
Power Gain at POUT= 19dBm
EVM at Pout = 19dBm
Total Current @ POUT = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
2nd Side Lobe
Total current Pout=23 dBm
Ramp-On Time
f
GP
IC_TOTAL
ICQ
IREF
S21
ΔS21
ΔS21
S11
S22
S12
tON
64QAM / 54Mbps OFDM
For ICQ = 70mA
Over 100MHz
0°C to +70°C
Pout = 19dBm
Pout = 19dbm
23 dBm 11 Mbps CCK
11 Mbps CCK
10 ~ 90%
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
LX5510B
Units
Min Typ Max
2.4
2.5 GHz
19
dB
3.0
%
135
mA
70
mA
1.5
mA
19
dB
±0.5
dB
±0.5
dB
10
dB
10
dB
40
dB
-55
dBc
-55
dBc
-50
dBc
190
mA
100
ns
Copyright © 2004
Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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