LX5510(2003) Просмотр технического описания (PDF) - Microsemi Corporation
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LX5510 Datasheet PDF : 7 Pages
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INTEGRATED PRODUCTS
CONFIDENTIAL
LX5510
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA ≤ 70°C except where
otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C
Parameter
Symbol
Test Conditions
Frequency Range
Power Gain at Pout = 19dBm
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over
Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Noise Figure
Ramp-On Time
f
Gp
Ictotal
Icq
Iref
S21
∆S21
∆S21
S11
S22
S12
NF
tON
64QAM / 54Mbps
For Icq = 65mA
Over 100MHz
-40°C to +85°C
Pout = 19dBm
Pout = 19dbm
10 ~ 90%
Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.
LX5510
Min Typ Max
2.4
2.5
20
3.0
120
65
1.2
20
±0.5
Units
GHz
dB
%
mA
mA
mA
dB
dB
TBD
dB
10
dB
10
dB
-40
dB
-60
dBc
-50
dBc
TBD
dB
100 ns
Copyright 2003
Rev. 0.3g, 2003-05-08
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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