LP62S16256F-T Просмотр технического описания (PDF) - AMIC Technology

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LP62S16256F-T

256K X 16 BIT LOW VOLTAGE CMOS SRAM

AMIC Technology 

Absolute Maximum Ratings*

VCC to GND .............................................. -0.5V to +4.0V

IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V

Operating Temperature, Topr ...................-25°C to +85°C

Storage Temperature, Tstg.....................-55°C to +125°C

Power Dissipation, PT....................................................................... 0.7W

LP62S16256F-T Series

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification is

not implied or intended. Exposure to the absolute

maximum rating conditions for extended periods may affect

device reliability.

DC Electrical Characteristics (TA = -25°C to + 85°C, VCC = 2.7V to 3.6V, GND = 0V)

Symbol

Parameter

⏐ILI⏐ Input Leakage Current

LP62S16256F-55LLT / 70LLT

Min.

Typ.

Max.

-

-

1

Unit

µA

Conditions

VIN = GND to VCC

⏐ILO⏐ Output Leakage Current

CE = VIH

-

-

1

µA HB = VIH or OE = VIH or

WE = VIH

VI/O = GND to VCC

ICC Active Power Supply Current

-

-

5

mA CE = VIL, II/O = 0mA

ICC1

Dynamic Operating

Current

ICC2

ISB

Standby Current

ISB1

VOL Output Low Voltage

VOH Output High Voltage

-

25

40

mA Min. Cycle, Duty = 100%

CE = VI, II/O = 0mA

-

5

8

mA

CE = VIL, VIH = VCC,

VIL = 0V, f = 1MHz,

II/O = 0 mA

-

-

1

mA VCC ≤ 3.3V

CE = VIH

-

0.3

10

µA VCC ≤ 3.3V

CE ≥ VCC - 0.2V,

VIN ≥ 0V

-

-

0.4

V

IOL = 2.1 mA

2.2

-

-

V

IOH = -1.0 mA

(August, 2005, Version 1.0)

4

AMIC Technology, Corp.

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