2N1711 Просмотр технического описания (PDF) - Philips Electronics
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2N1711 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
2N1711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Tcase ≤ 100 °C
Tcase ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
75
50
7
500
1
200
0.8
1.7
3
+150
200
+150
UNIT
V
V
V
mA
A
mA
W
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
VALUE
219
58.3
UNIT
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
fT
Cc
Ce
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
collector capacitance
emitter capacitance
CONDITIONS
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tamb = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 10 V
IC = 0.1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V; note 1
IC = 10 mA; VCE = 10 V; Tamb = −55 °C
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 50 mA; VCE = 10 V; f = 100 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
MIN.
−
−
−
20
35
75
35
100
40
−
−
70
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
10
10
5
−
−
−
−
300
−
500
1.3
−
25
80
UNIT
nA
µA
nA
mV
V
MHz
pF
pF
1997 May 28
3
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