L6370Q Просмотр технического описания (PDF) - STMicroelectronics
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L6370Q Datasheet PDF : 17 Pages
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Electrical specifications
L6370Q
Symbol
Table 5. Electrical characteristics (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
Voth1
Output status threshold 1
voltage
Voth2
Output status threshold 2
voltage
(See Figure 3)
Vohys
Output status threshold
hysteresis
Iosd
Vosd
Ioslk
Vdgl
Idglk
Output status source current Vout > Voth1; Vos = 2.5 V
Active output status driver drop Vs - Vos; Ios = 2 mA
voltage
Tamb = 0 to +85 °C
Output status driver leakage
current
Vout < Voth2; Vos = 0 V
Vs = 9.5 to 35 V
Diagnostic drop voltage
D1 / D2 = L; Idiag= 0.5 mA
D1 / D2 = L; Idiag= 3 mA
Diagnostic leakage current
D1 / D2 = H; 0 < Vdg < Vs
Vs = 9.5 to 35 V
Source drain NDMOS diode
4.5
5
5.5
V
4
4.5
5.0
V
300
500
700
mV
2
4
mA
1.5
3
V
25
μA
40
250
mV
5
μA
Vfsd Forward on voltage
Ifp
Forward peak current
trr
Reverse recovery time
tfr
Forward recovery time
Thermal characteristics
@ Ifsd = 2.5 A
t = 10 ms; d = 20%
If = 2.5 A di/dt = 25 A/μs
1
1.5
V
6
A
200
ns
100
ns
Θlim Junction temperature protection
Θth Thermal hysteresis
135
150
°C
20
°C
Note:
Vil ≤ 0.8V, Vih ≥ 2V @ (V+In > V-In)
2.4
AC operation
Symbol
Parameter
tr - tf
td
dV/dt
tON
Rise or fall time
Delay time
Slew rate (rise and fall edge)
On-time during short-circuit
condition
Table 6. AC operation
Test conditions
Vs = 24 V; RI = 70 Ω; Rl to
ground
50 pF < CON < 2 nF
Min. Typ. Max. Unit
20
μs
5
μs
0.7
1
1.5 V/μs
1.28
μs/pF
8/17
DocID022313 Rev 2
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