KK100-6 Просмотр технического описания (PDF) - Kodenshi Auk Co., LTD

Номер в каталоге

Компоненты Описание

Список матч

KK100-6

Sensitive Gate Silicon Controlled Rectifiers

Kodenshi Auk Co., LTD 

KK100-6

Electrical Characteristics

Symbol

Items

IDRM

Repetitive Peak Off-

State Current

VTM

Peak On-State

Voltage(1)

IGT

Gate Trigger

Current(2)

VGT

Gate Trigger

Voltage(2)

Non-Trigger Gate

VGD Voltage(1)

dv/dt

Critical Rate of Rise

Off-State Voltage

Conditions

Ratings

Unit

Min Typ Max

V =V AK DRM, or VRRM:RGK=1000Ω

Tc=25℃ ━

Tc=125℃ ━

━ 10

━ 200

㎂

(ITM=1A, Peak)

━ 1.2 1.7

V

VAK=6V, RL=100Ω

Tc=25℃ ━

Tc=-40℃ ━

━ 200

━ 500

㎂

VD=7V, RL=100Ω

Tc=25℃ ━

Tc=-40℃ ━

━ 0.8

━ 1.2

V

VAK=12V, RL=100Ω

Tc=125℃

VD=Rated VDRM, Exponential wave-

form RGK=1000Ω TJ=125℃

0.2 ━ ━

500 800 ━

V

V/㎲

di/dt

IH

Rth(j-c)

Rth(j-a)

Critical Rate of Rise

Off-State Voltage

IPK=20A ; PW=10㎲;diG/dt=1A/㎲

lgt=20mA

━ ━ 50

Holding Current

Thermal Impedance

Thermal Impedance

VAK=12V, Gate Open

Initiating Current=20mA Tc=25℃ ━

Tc=-40℃ ━

Junction to case

━

Junction to Ambient

━

2 5.0

━ 10

━ 60

━ 150

A/㎲

mA

℃/W

℃/W

※ Notes :

1. Pulse Width ≤1.0ms, Duty cycle ≤1%

2. Does not include RGK in measurement.

2

Share Link: