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KBP207G

SINGLE PHASE SILICON BRIDGE RECTIFIER

Diotech Company. 

KBP201G THRU KBP207G

SINGLE PHASE SILICON BRIDGE RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere

FEATURES

● Ideal for printed circuit board

● Surge overload rating: 60A peak

● High case dielectric strength

● High temperature soldering guaranteed:

260°C/10 seconds at 5lbs. (2.3kg) tension

MECHANICAL DATA

● Case: UL-94 Class V-0 recognized Flame Retardant Epoxy

● Terminals: Plated leads solderable per

MIL-STD 202, method 208

● Mounting Position: Any

● Weight: 1.70 g

● Marking: Type Number

KBP

.460(11.68)

.420(10.6)

AC

.035(0.9)

.028(0.7)

.5 (12.7)

MIN

.160(4.1)

.140(3.6)

SPACING

.600(15.24)

.560(14.22)

.153(3.9)

.146(3.7)

.050(1.27)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Output Current at TA = 25oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum DC Forward Voltage Drop per Bridge

Element at 2.0A DC

Maximum Reverse Current at rated

DC Blocking Voltage per element

@TA = 25oC

@TA = 125oC

Operating and Storage Temperature Range

SYMBOL

VRRM

VRMS

VDC

IO

KBP201G KBP202G KBP203G KBP204G KBP205G KBP206G KBP207G UNITS

50

100

200

400

600

800

1000

V

35

70

140

280

420

560

700

V

50

100

200

400

600

800

1000

V

2.0

A

IFSM

60

A

VF

IR

TJ,TSTG

1.1

V

10.0

μA

500

-55 to + 150

0C

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