K4E640411D Просмотр технического описания (PDF) - Samsung
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K4E640411D Datasheet PDF : 21 Pages
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K4E660411D, K4E640411D
CAPACITANCE (TA=25°C, VCC=5.0V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A12]
CIN1
-
Input capacitance [RAS, CAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ3]
CDQ
-
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=5.0V±10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-50
Min
Max
Random read or write cycle time
tRC
84
Read-modify-write cycle time
tRWC
116
Access time from RAS
tRAC
50
Access time from CAS
tCAC
13
Access time from column address
tAA
25
CAS to output in Low-Z
tCLZ
3
Output buffer turn-off delay from CAS
tCEZ
3
13
OE to output in Low-Z
tOLZ
3
Transition time (rise and fall)
tT
1
50
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
30
50
10K
13
38
8
10K
20
37
15
25
CAS to RAS precharge time
tCRP
5
Row address set-up time
tASR
0
Row address hold time
tRAH
10
Column address set-up time
tASC
0
Column address hold time
tCAH
8
Column address to RAS lead time
tRAL
25
Read command set-up time
tRCS
0
Read command hold time referenced to CAS tRCH
0
Read command hold time referenced to RAS tRRH
0
Write command hold time
tWCH
10
Write command pulse width
tWP
10
Write command to RAS lead time
tRWL
13
Write command to CAS lead time
tCWL
8
Data set-up time
tDS
0
CMOS DRAM
Max
Units
5
pF
7
pF
7
pF
-60
Min
Max
104
138
60
15
30
3
3
13
3
1
50
40
60
10K
15
45
10
10K
20
45
15
30
5
0
10
0
10
30
0
0
0
10
10
10
10
0
Units Note
ns
ns
ns 3,4,10
ns 3,4,5
ns
3,10
ns
3
ns
6,14
ns
3
ns
2
ns
ns
ns
ns
ns
ns
4
ns
10
ns
ns
ns
ns
ns
ns
ns
8
ns
8
ns
ns
ns
ns
ns
ns
9
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