K4E160411D Просмотр технического описания (PDF) - Samsung

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K4E160411D

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

Samsung 

K4E170411D, K4E160411D

K4E170412D, K4E160412D

HYPER PAGE READ-MODIFY-WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

tCSH

tRASP

tRP

tRSH

VIH -

CAS

VIL -

VIH -

A

VIL -

tCRP

tRCD

tRAD

tRAH

tASR

tASC

ROW

ADDR

COL.

ADDR

tCAS

tCAH

tRCS

tCWL

tHPRWC

tCP

tCAS

tASC

tCAH

COL.

ADDR

tRAL

tRWL

tCWL

tCRP

VIH -

W

VIL -

tWP

tCWD

tAWD

tRWD

tWP

tCWD

tAWD

tCPWD

VIH -

OE

VIL -

DQ0 ~ DQ3(7)

VI/OH -

tOEA

tOEA

tCAC

tAA

tRAC

tOED

tOEZ

tDH

tDS

tCAC

tAA

tOED

tOEZ

tDH

tDS

VI/OL -

tCLZ

tOLZ

VALID

DATA-OUT

tCLZ

VALID

DATA-IN

tOLZ

VALID

DATA-OUT

VALID

DATA-IN

Don′t care

Undefined

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