IXGA12N60C Просмотр технического описания (PDF) - IXYS CORPORATION
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IXGA12N60C Datasheet PDF : 4 Pages
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1.5
3
TJ = 125°C
RG = 10Ω
1.0
2
E(ON)
0.5
E(OFF)
1
0.0
0
0
5
10
15
20
25
IC - Amperes
Fig. 7. Dependence of EON and EOFF on IC.
16
IC = 12A
VCE = 300V
12
8
4
0
0
10
20
30
40
50
Qg - nanocoulombs
Fig. 9. Gate Charge
IXGA12N60C IXGP12N60C
1.5
3
TJ = 125°C
1.0
E(ON)
E(ON)
0.5
E(ON)
0.0
0 10
IC =24A
IC = 12A
IC = 6A
20 30 40
2
E(OFF)
1 E(OFF)
E(OFF)
0
50 60
RG - Ohms
Fig. 8. Dependence of EON and EOFF on RG.
100
24
10
TJ = 125°C
RG = 4.7Ω
dV/dt < 5V/ns
1
0.1
0
100 200 300 400 500 600
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
1 D=0.5
D=0.2
D=0.1
0.1 D=0.05
D=0.02
D=0.01
0.01 Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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