R460S2 Просмотр технического описания (PDF) - Fairchild Semiconductor
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R460S2 Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
R460P2
R460S2
R460S3S
R460S3S
Device
ISL9R460P2
ISL9R460S2
ISL9R460S3S
ISL9R460S3ST
Package
TO-220AC
TO-262
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
50
50
50
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 4A
TC = 25°C
TC = 125°C
- 2.0 2.4 V
- 1.6 2.0 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
-
19
-
pF
Switching Characteristics
trr
Reverse Recovery Time
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
17 20 ns
IF = 4A, dIF/dt = 100A/µs, VR = 30V
-
19 22 ns
trr
IRRM
QRR
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
IF = 4A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-
17
-
ns
- 2.6 -
A
-
22
-
nC
trr
S
IRRM
QRR
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovery Charge
IF = 4A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-
77
-
ns
- 4.2 -
- 2.8 -
A
- 100 -
nC
trr
S
IRRM
QRR
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovery Charge
IF = 4A,
dIF/dt = 400A/µs,
VR = 390V,
TC = 125°C
-
54
-
ns
- 3.5 -
- 4.3 -
A
110 -
nC
dIM/dt Maximum di/dt during tb
- 500 - A/µs
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
-
- 2.6 °C/W
-
-
62 °C/W
-
-
62 °C/W
62 °C/W
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
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