ISL84052IB-T(2003) Просмотр технического описания (PDF) - Intersil
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ISL84052IB-T
(Rev.:2003)
(Rev.:2003)
Intersil
ISL84052IB-T Datasheet PDF : 17 Pages
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ISL84051, ISL84052, ISL84053
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and V-. One
of these diodes conducts if any analog signal exceeds V+
or V-.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or V-. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or V- and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and V- pins constitutes the analog-signal-
path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and GND.
Typical Performance Curves TA = 25oC, Unless Otherwise Specified
70
60
V- = -5V
VCOM = (V+) - 1V
ICOM = 1mA
50
85oC
40
25oC
30
-40oC
20
400
V- = 0V
300
200
85oC 25oC
100
-40oC
0
2 3 4 5 6 7 8 9 10 11 12
V+ (V)
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE
225
200
ICOM = 1mA
175
150
85oC
125
100
75
160
140
120
100
80
60
100
90
80
70 25oC
60
50
40
0
85oC
1
25oC
-40oC
V+ = 2.7V
V- = 0V
85oC
25oC
-40oC
V+ = 3.3V
V- = 0V
V+ = 5V V- = 0V
2
3
VCOM (V)
-40oC
4
5
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
120
110
100
ICOM = 1mA
90
80
70
60
50
90
80
70
85oC
60
50
25oC
40
-40oC
30
60
50 25oC
85oC
40
85oC
VS = ±2V
25oC
-40oC
VS = ±3V
VS = ±5V
30 -40oC
20
-5 -4 -3 -2 -1 0 1 2 3 4 5
VCOM (V)
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE
2
1
0
-1
VS = ±5V
-2
V+ = 5V
V- = 0V
-3
-5
-2.5
0
2.5
5
VCOM (V)
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
13
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