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ISL6236AIRZ

High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers

Intersil 

ISL6236A

Electrical Specifications

PARAMETER

No load on LDO, OUT1, OUT2, VREF3, and REF, VIN = 12V, EN2 = EN1 = VCC, VBYP = 5V, PVCC = 5V,

VEN_LDO = 5V, TA = -40°C to +100°C, unless otherwise noted. Typical values are at TA = +25°C. (Continued)

CONDITIONS

MIN

TYP

MAX UNITS

REFIN2 Input Voltage

OUT2 Dynamic Range, VOUT2 = VREFIN2

Fixed OUT2 = 1.05V

0.5

2.50

V

3.0

VCC - 1.1 V

Fixed OUT2 = 3.3V

VCC - 1.0

V

LDOREFIN Input Voltage

Fixed LDO = 5V

0.30

V

LDO Dynamic Range, VLDO = 2 x VLDOREFIN

Fixed LDO = 3.3V

0.35

VCC - 1.0

2.25

V

V

SKIP# Input Voltage

Low level (SKIP)

0.8

V

Float level (ULTRASONIC SKIP)

1.7

2.3

V

High level (PWM)

2.4

V

TON Input Voltage

Low level

0.8

V

Float level

1.7

2.3

V

High level

2.4

V

EN1, EN2 Input Voltage

Clear fault level/SMPS off level

0.8

V

Delay start level

1.7

2.3

V

SMPS on level

2.4

V

EN LDO Input Voltage

Rising edge

1.2

1.6

2.0

V

Falling edge

0.94

1.00

1.06

V

Input Leakage Current

INTERNAL BOOT DIODE

VtON = 0V or 5V

VEN = VEN LDO = 0V or 5V

VSKIP# = 0V or 5V

VFB1 = VSECFB = 0V or 5V

VREFIN = 0V or 2.5V

VLDOREFIN = 0V or 2.75V

-1

+1

µA

-0.1

+0.1

µA

-1

+1

µA

-0.2

+0.2

µA

-0.2

+0.2

µA

-0.2

+0.2

µA

VD Forward Voltage

IBOOT LEAKAGE Leakage Current

MOSFET DRIVERS

PVCC - VBOOT, IF = 10mA

VBOOT = 30V, PHASE = 25V, PVCC = 5V

0.65

0.8

V

500

nA

UGATE Gate-Driver Sink/Source Current UGATE1, UGATE2 forced to 2V

2

A

LGATE Gate-Driver Source Current

LGATE1 (source), LGATE2 (source), forced to 2V

1.7

A

LGATE Gate-Driver Sink Current

LGATE1 (sink), LGATE2 (sink), forced to 2V

3.3

A

UGATE Gate-Driver On-Resistance

BOOT_ - PHASE_ forced to 5V, Guaranteed by design

1.5

4.0

Ω

LGATE Gate-Driver On-Resistance

LGATE, high state (pull-up), Guaranteed by design

2.2

5.0

Ω

LGATE, low state (pull-down), Guaranteed by design

0.6

1.5

Ω

Dead Time

LGATE Rising

15

20

35

ns

UGATE Rising

20

30

50

ns

OUT1, OUT2 Discharge On Resistance

25

40

Ω

6

FN6453.0

March 14, 2007

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