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IS62WV25616ALL-70T

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

Integrated Silicon Solution 

IS62WV25616ALL, IS62WV25616BLL

ISSI ®

IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

ICC

VDDDynamicOperating VDD=Max.,

Supply Current

IOUT = 0 mA, f = fMAX

ICC1

Operating Supply

Current

VDD = Max., CS1 = 0.2V

WE = VDD-0.2V

f=1MHZ

ISB1

TTL Standby Current

VDD = Max.,

(TTL Inputs)

VIN = VIH or VIL

CS1 = VIH , f = 1 MHZ

Com.

Ind.

Com.

Ind.

Com.

Ind.

OR

ULB Control

VDD = Max., VIN = VIH or VIL

CS1 = VIL, f = 0, UB = VIH, LB = VIH

ISB2

CMOS Standby

VDD = Max.,

Current(CMOSInputs) CS1≥ VDD–0.2V,

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

OR

ULB Control

VDD = Max., CS1 = VIL,

VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V

Max.

Unit

70

25

mA

30

10

mA

10

0.35

mA

0.35

15

µA

15

IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

Max. Max.

Unit

55

70

ICC

VDDDynamicOperating VDD=Max.,

Com.

40

35

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

45

40

ICC1

Operating Supply

VDD = Max., CS1 = 0.2V

Com.

15

15

mA

Current

WE = VDD-0.2V

Ind.

15

15

f=1MHZ

ISB1

TTL Standby Current

VDD = Max.,

Com.

0.35 0.35

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

0.35 0.35

CS1 = VIH, f = 1 MHZ

OR

ULB Control

VDD = Max., VIN = VIH or VIL

CS1 = VIL, f = 0, UB = VIH, LB = VIH

ISB2

CMOS Standby

VDD = Max.,

Com.

15

15

µA

Current(CMOSInputs) CS1≥ VDD–0.2V,

Ind.

15

15

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

OR

ULB Control

VDD = Max., CS1 = VIL,

VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

05/02/05

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