IS62C1024AL Просмотр технического описания (PDF) - Integrated Silicon Solution

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IS62C1024AL

128K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62C1024AL

IS65C1024AL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

Vterm

Terminal Voltage with Respect to GND

–0.5 to +7.0

V

Tstg

Storage Temperature

–65 to +125

°C

Pt

Power Dissipation

1.0

W

Iout

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-

ability.

CAPACITANCE(1,2)

Symbol

Cin

Cout

Parameter

Input Capacitance

Output Capacitance

Conditions

Vin = 0V

Vout = 0V

Max.

6

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 5.0V.

Unit

pF

pF

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Voh

Output HIGH Voltage

Vol

Output LOW Voltage

Vih

Input HIGH Voltage

Vil

Input LOW Voltage(1)

Ili

Input Leakage

Ilo

Output Leakage

Test Conditions

Options

Vdd = Min., Ioh = –1.0 mA

Vdd = Min., Iol = 2.1 mA

GND ≤ Vin ≤ Vdd

GND ≤ Vout ≤ Vdd

CE1 = Vih, or

CE2 = Vil, or OE = Vih or

WE = Vil

Com.

Ind.

Auto.

Com.

Ind.

Auto.

Min.

Max.

Unit

2.4

—

V

—

0.4

V

2.2 Vdd + 0.5

V

-0.5

0.8

V

-1

1

µA

-2

2

-5

5

-1

1

µA

-2

2

-5

5

Note:

1. Vil (min.) = -0.3V DC; Vil (min.) = -2.0V AC (pulse width -2.0 ns). Not 100% tested.

Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width -2.0 ns). Not 100% tested.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. H

06/26/08

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