IS62C1024AL-35T(2005) Просмотр технического описания (PDF) - Integrated Silicon Solution

Номер в каталоге

Компоненты Описание

Список матч

IS62C1024AL-35T
(Rev.:2005)

128K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62C1024AL

IS65C1024AL

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VTERM

TSTG

PT

IOUT

Parameter

Terminal Voltage with Respect to GND

Storage Temperature

Power Dissipation

DC Output Current (LOW)

Value

Unit

–0.5 to +7.0

V

–65 to +125

°C

1.0

W

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

CAPACITANCE(1,2)

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

6

8

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

Unit

pF

pF

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage(1)

ILI

Input Leakage

ILO

Output Leakage

Test Conditions

Options Min.

Max.

Unit

VDD = Min., IOH = –1.0 mA

2.4

—

V

VDD = Min., IOL = 2.1 mA

—

0.4

V

2.2 VDD + 0.5

V

-0.5

0.8

V

GND ≤ VIN ≤ VDD

Com.

-1

1

µA

Ind.

-2

2

Auto.

-5

5

GND ≤ VOUT ≤ VDD

Com.

-1

CE1 = VIH, or

Ind.

-2

CE2 = VIL, or OE = VIH or

Auto.

-5

WE = VIL

1

µA

2

5

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. C

01/24/05

Share Link: