IS62C1024 Просмотр технического описания (PDF) - Integrated Silicon Solution
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IS62C1024 Datasheet PDF : 8 Pages
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IS62C1024
TRUTH TABLE
Mode
WE CE1 CE2 OE
Not Selected X
H
XX
(Power-down) X
X
LX
Output Disabled H
L
HH
Read
H
L
HL
Write
L
L
HX
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TBIAS
TSTG
PT
IOUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
Unit
–0.5 to +7.0
V
–10 to +85
°C
–65 to +150
°C
1.5
W
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
CAPACITANCE(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
Unit
pF
pF
ISSI ®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
ILO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Output Leakage
Test Conditions
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
01/14/00
Min.
2.4
—
2.2
–0.3
–5
–10
–5
–10
Max.
—
0.4
VCC + 0.5
0.8
5
10
5
10
Unit
V
V
V
V
µA
µA
3
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