IS61C25616AL Просмотр технического описания (PDF) - Integrated Silicon Solution
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IS61C25616AL Datasheet PDF : 17 Pages
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IS61C25616AL IS61C25616AS
IS64C25616AL IS64C25616AS
TRUTH TABLE
Mode
WE
CE
OE
LB
UB
Not Selected
X
H
X
X
X
Output Disabled
H
L
H
X
X
X
L
X
H
H
Read
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
Write
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND
–0.5 to +7.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.5
W
IOUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Output Capacitance
VOUT = 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage(1)
ILI
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD
Outputs Disabled
Note: 1. VIL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
03/21/2008
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.2 VDD + 0.5
V
–0.3
0.8
V
Com. –1
1
µA
Ind. –2
2
Auto. –5
5
Com. –1
1
µA
Ind. –2
2
Auto. –5
5
3
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