RMWL05001 Просмотр технического описания (PDF) - Raytheon Company
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RMWL05001 Datasheet PDF : 6 Pages
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RMWL05001
5 GHz Low Noise Amplifier MMIC
Figure 3
Layout and Bond
Pad Locations
Chip Size is
2.0 mm x 1.15 mm x
100µm. Back of chip is
RF and DC ground
Dimensions in mm
0.0 0.131
1.15
1.048
0.706
0.5495
0.393
1.345
PRODUCT INFORMATION
2.0
1.15
0.706
0.5495
0.393
Figure 4
Recommended
Assembly Diagram
0.0
0.0
5mil Thick
Alumina
50-Ohm
0.798
Vd
(Positive)
1.422
10,000pF
100pF
0.0
2.0
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
RF
Input
2 mil Gap
RF
Output
L< 0.015”
(4 Places)
Test Procedure
for Biasing and
Operation
www.raytheon.com/micro
Notes:
1. Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
2. Amplifier is self-biased so no gate supply is required.
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE CORRESPONDING DRAIN VOLTAGE (Vd) IS PRESENT
CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier.
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 5: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd).
Characteristic performance data and specifications are subject to change without notice.
Revised March 2, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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