IS41C16105C Просмотр технического описания (PDF) - Integrated Silicon Solution
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IS41C16105C Datasheet PDF : 20 Pages
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IS41C16105C
IS41LV16105C
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Vt
Parameters
Voltage on Any Pin Relative to GND
5V
3.3V
Rating Unit
–1.0 to +7.0 V
–0.5 to +4.6
Vdd
Supply Voltage
5V
3.3V
–1.0 to +7.0 V
–0.5 to +4.6
Iout
Output Current
50
mA
Pd
Power Dissipation
1
W
Ta
Industrial Temperature
–40 to +85 °C
Tstg
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol Parameter
Vdd
Supply Voltage
Test Condition
5V
3.3V
Min. Typ.
4.5 5.0
3.0 3.3
Vih
Input High Voltage
Vil
Input Low Voltage
5V 2.4 —
3.3V 2.0 —
5V –1.0 —
3.3V –0.3 —
Iil
Input Leakage Current
Any input 0V ≤ Vin ≤ Vdd
–5
Other inputs not under test = 0V
Iio
Output Leakage Current
Output is disabled (Hi-Z)
–5
0V ≤ Vout ≤ Vdd
Voh
Output High Voltage Level Ioh = –5.0 mA
Ioh = –2.0 mA
5V 2.4
3.3V 2.4
Vol
Output Low Voltage Level Iol = 4.2 mA
Iol = 2.0 mA
5V —
3.3V —
Max.
5.5
3.6
Vdd + 1.0
Vdd + 0.3
0.8
0.8
5
Unit
V
V
V
µA
5
µA
—
V
—
0.4
V
0.4
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Cin1
Input Capacitance: A0-A9
5
Cin2
Input Capacitance: RAS, UCAS, LCAS, WE, OE
7
Cio
Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz,
Unit
pF
pF
pF
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
02/24/2012
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