IRKN27/08AS90 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRKN27/08AS90

ADD-A-pak™ GEN V Power Modules

International Rectifier 

Triggering

Parameters

PGM Max. peak gate power

PG(AV) Max. average gate power

IGM

-VGM

Max. peak gate current

Max. peak negative

gate voltage

VGT Max. gate voltage

required to trigger

IGT Max. gate current

required to trigger

VGD Max. gate voltage

that will not trigger

IGD Max. gate current

that will not trigger

Blocking

Parameters

IRRM

IDRM

Max. peak reverse and

off-state leakage current

at VRRM, VDRM

VINS RMS isolation voltage

dv/dt Max. critical rate of rise

IRK. 26

10

2.5

2.5

10

4.0

2.5

1.7

270

150

80

0.25

6

IRK. 26

15

2500 (1 min)

3500 (1 sec)

500

IRK.26 Series

Bulletin I27130 rev. G 10/02

Units Conditions

W

A

V

TJ = - 40°C

Anode supply = 6V

TJ = 25°C

TJ = 125°C

resistive load

TJ = - 40°C

Anode supply = 6V

mA

TJ = 25°C

resistive load

TJ = 125°C

V

TJ = 125oC,

rated VDRM applied

mA

TJ = 125oC,

rated VDRM applied

Units Conditions

mA

V

V/µs

TJ = 125oC, gate open circuit

50 Hz, circuit to base, all terminals

shorted

TJ = 125oC, linear to 0.67 VDRM,

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.

Thermal and Mechanical Specifications

Parameters

TJ Junction operating

temperature range

Tstg

RthJC

Storage temp. range

Max. internal thermal

resistance, junction

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar

wt Approximate weight

Case style

IRK.26

- 40 to 125

- 40 to 125

0.31

0.1

5

3

110 (4)

TO-240AA

Units Conditions

°C

K/W

Per module, DC operation

Mounting surface flat, smooth and greased

Nm

gr (oz)

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the

spread of the compound

JEDEC

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Devices

180o

IRK.26

0.23

Sine half wave conduction

120o

0.27

90o

0.34

60o

0.48

30o

0.73

Rect. wave conduction

180o

0.17

120o

0.28

90o

0.36

60o

0.49

30o

0.73

Units

°C/W

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