HM62V8512BLTT Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62V8512BLTT

4 M SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM62V8512B Series

4 M SRAM (512-kword × 8-bit)

ADE-203-905G (Z)

Rev. 6.0

Mar. 31, 2000

Description

The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,

higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The

device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high

density mounting. The HM62V8512B is suitable for battery backup system.

Features

• Single 3.0 V supply: 2.7 V to 3.6 V

• Access time: 70/85 ns (max)

• Power dissipation

 Active: 15 mW/MHz (typ)

 Standby: 3 µW (typ)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly LV-TTL compatible: All inputs

• Battery backup operation

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