HM628512BFP-5 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM628512BFP-5

4M SRAM (512-kword x 8-bit)

Hitachi -> Renesas Electronics 

HM628512BFP Series

Function Table

WE

CS

OE

×

H

×

H

L

H

H

L

L

L

L

H

L

L

L

Note: ×: H or L

Mode

Not selected

Output disable

Read

Write

Write

VCC current

ISB, ISB1

I CC

I CC

I CC

I CC

Dout pin

High-Z

High-Z

Dout

Din

Din

Ref. cycle

—

—

Read cycle

Write cycle (1)

Write cycle (2)

Absolute Maximum Ratings

Parameter

Symbol

Power supply voltage

Voltage on any pin relative to VSS

Power dissipation

Operating temperature

VCC

VT

PT

Topr

Storage temperature

Tstg

Storage temperature under bias

Tbias

Notes: 1. –3.0 V for pulse half-width ≤ 30 ns

2. Maximum voltage is 7.0 V

Value

–0.5 to +7.0

–0.5*1 to VCC + 0.3*2

1.0

–20 to +70

–55 to +125

–20 to +85

Unit

V

V

W

°C

°C

°C

Recommended DC Operating Conditions (Ta = –20 to +70°C)

Parameter

Symbol

Min

Supply voltage

VCC

VSS

Input high voltage

VIH

Input low voltage

VIL

Note: 1. –3.0 V for pulse half-width ≤ 30 ns

4.5

0

2.2

–0.3*1

Typ

Max

Unit

5.0

5.5

V

0

0

V

—

VCC + 0.3

V

—

0.8

V

4

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