HM62W16258BLTTI-7 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W16258BLTTI-7

4 M SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM62W16258BI Series

DC Characteristics

Parameter

Symbol Min Typ*1 Max Unit Test conditions

Input leakage current

|ILI|

—

—

1

µA Vin = VSS to VCC

Output leakage current

|ILO|

—

—

1

µA CS = VIH or OE = VIH or WE = VIL, or

LB = UB =VIH,, VI/O = VSS to VCC

Operating current

I CC

—

—

20

mA CS = VIL, Others = VIH/VIL, II/O = 0 mA

Average HM62W16258BI-7 ICC1

—

operating

current

—

70

mA Min. cycle, duty = 100%,

II/O = 0 mA, CS = VIL,

Others = VIH/VIL

I CC2

—

3

15

mA Cycle time = 1 µs, duty = 100%,

II/O = 0 mA, CS ≤ 0.2 V,

VIH ≥ VCC – 0.2 V, VIL ≤ 0.2 V

Standby current

I SB

—

—

0.3

mA CS = VIH

Standby current

I SB1

—

1

40

µA 0 V ≤ Vin

CS ≥ VCC – 0.2 V

Output high voltage

VOH

2.4

—

—

V

IOH = –1 mA

VCC – 0.2 —

—

V

IOH = –100 µA

Output low voltage

VOL

—

—

0.4

V

IOL = 2 mA

—

—

0.2

V

IOL = 100 µA

Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.

Capacitance (Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol Min

Typ

Max

Input capacitance

Cin

—

—

8

Input/output capacitance CI/O

—

—

10

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions Note

Vin = 0 V

1

VI/O = 0 V

1

5

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