IRFS640A Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFS640A Datasheet PDF : 7 Pages
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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 1 5 V
10 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.4
VGS = 10 V
0.3
0.2
0.1
VGS = 20 V
@ Note : TJ = 25 oC
0.0
0
20
40
60
80
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
2000
1500
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1000
C oss
500
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFS640A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
10-1
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
5
@ Notes : ID = 18.0 A
0
0
10
20
30
40
50
QG , Total Gate Charge [nC]
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