IRFS640A Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

IRFS640A

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Lower RDS(ON) : 0.144 Ω (Typ. )

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25 oC)

Continuous Drain Current (TC=100 oC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TC=25 oC)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

IRFS640A

BVDSS = 200 V

RDS(on) = 0.18 Ω

ID = 9.8 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

Value

200

9.8

6.2

72

+_ 30

256

9.8

4.3

5.0

43

0.35

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/oC

oC

Thermal Resistance

Symbol

RθJC

RθJA

Characteristic

Junction-to-Case

Junction-to-Ambient

©1999 Fairchild Semiconductor Corporation

Typ.

--

--

Max.

2.89

62.5

Units

oC/W

Rev. B

Share Link: