HM62W8511HI Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W8511HI

4M High Speed SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM62W8511HI Series

AC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, unless otherwise noted.)

Test Conditions

• Input pulse levels: 3.0 V/0.0 V

• Input rise and fall time: 3 ns

• Input and output timing reference levels: 1.5 V

• Output load: See figures (Including scope and jig)

Dout Zo=50 Ω

1.5 V

RL=50 Ω

Dout

353 Ω

3.3 V

319Ω

5 pF

Read Cycle

Output load (A)

Parameter

Read cycle time

Address access time

Chip select access time

Output enable to outpput valid

Output hold from address change

Chip select to output in low-Z

Output enable to output in low-Z

Chip deselect to output in high-Z

Output disable to output in high-Z

Output load (B)

(for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW)

Symbol

t RC

t AA

t ACS

t OE

t OH

t CLZ

t OLZ

t CHZ

t OHZ

HM62W8511HI

-15

Min

Max

15

—

—

15

—

15

—

7

3

—

3

—

0

—

—

7

—

7

Unit

Notes

ns

ns

ns

ns

ns

ns

1

ns

1

ns

1

ns

1

6

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