HM62W8511HJPI-15 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

HM62W8511HJPI-15

4M High Speed SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM62W8511HI Series

DC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, VSS = 0V)

Parameter

Symbol Min

Input leakage current

IILII

—

Output leakage current

IILOI

—

Operation power

15 ns cycle ICC

—

supply current

Standby power supply 15 ns cycle ISB

—

current

I SB1

—

Typ*1

—

—

—

Max

2

2

130

Unit

µA

µA

mA

—

50

mA

0.05 5

mA

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.

Test conditions

Vin = VSS to VCC

Vin = VSS to VCC

Min cycle

CS = VIL, lout = 0 mA

Other inputs = VIH/VIL

Min cycle

CS = VIH,

Other inputs = VIH/VIL

f = 0 MHz

VCC ≥ CS ≥ VCC - 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC - 0.2 V

IOL = 8 mA

IOH = –4 mA

Capacitance (Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol Min

Typ

Input capacitance*1

Cin

—

—

Input/output capacitance*1

CI/O

—

—

Note: 1. This parameter is sampled and not 100% tested.

Max

6

8

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

5

Share Link: