HM62W16255HCJP-10 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W16255HCJP-10

4M High Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM62W16255HC Series

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC*3

VSS * 4

3.0

3.3

0

0

Input voltage

VIH

2.0

—

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

3.6

0

VCC + 0.5*2

0.8

Unit

V

V

V

V

DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

|ILI|

—

—

2

µA Vin = VSS to VCC

Output leakage current

|ILO|

—

—

2

µA Vin = VSS to VCC

Operating power supply current ICC

—

—

145

mA Min cycle

CS = VIL, Iout = 0 mA

Other inputs = VIH/VIL

Standby power supply current

I SB

—

—

40

mA Min cycle, CS = VIH,

Other inputs = VIH/VIL

I SB1

—

TBD 5

mA f = 0 MHz

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

—*2

TBD*2 1.0*2

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.

2. This characteristics is guaranteed only for L-version.

IOL = 8 mA

IOH = –4 mA

6

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